STC08IE150HV Datasheet (ST Microelectronics) - Emitter Switched Bipolar Transistor

STC08IE150HV, Emitter Switched Bipolar Transistor

The STC08IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications.

it is designed for use in Gate Driven based topologies.

Order Codes Part Number STC08IE150HV Marking C08IE150HV Package TO247-4LHV Packaging TUBE Decembe

STC08IE150HV Features

* VCS(ON) 0.8 V

* PRELIMINARY DATA IC 8A RCS(ON) 0.10 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHZ Squared rbsoa, up to 1500 V Very low C ISS driven by RG = 47 Ω Very low turn-off cross over time In compliance with the 2002/93/