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STC08IE150HV Emitter Switched Bipolar Transistor

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Description

www.DataSheet4U.com STC08IE150HV Emitter Switched Bipolar Transistor ESBT® 1500 V - 8 A - 0.10 Ω .
The STC08IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications.

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Features

* VCS(ON) 0.8 V
* PRELIMINARY DATA IC 8A RCS(ON) 0.10 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHZ Squared rbsoa, up to 1500 V Very low C ISS driven by RG = 47 Ω Very low turn-off cross over time In compliance with the 2002/93/

STC08IE150HV Distributors

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STC08IE150HV Emitter Switched Bipolar Transistor ST Microelectronics
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