STD2NC45 Datasheet | STMicroelectronics

N The Super MESH™ series is obtained through an extreme optimization of ST’s well established stripbased Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series plements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. TO-92 (Ammopack) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE LOW POWER SUPPLIES (SMPS) s LOW POWER, LOW COST CFL (PACT FLUORESCENT LAMPS) s LOW POWER BATTERY CHARGERS s ORDERING INFORMATION SALES TYPE STD2NC45-1 STQ1NC45 STQ1NC45-AP MARKING D2NC45 Q1NC45 Q1NC45 PACKAGE IPAK TO-92 TO-92 PACKAGING TUBE BULK AMMOPAK June 2003 1/11 STD2NC45-1, STQ1NC45 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tj Tstg Parameter STD2NC45-1 Value STQ1NC45 Unit V V V 0.5 0.315 2 3.1 0.025 A A A W W/°C V/ns °C °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 1.5 0.95 6 30 0.24 450 450 ± 30 3 -65 to 150 -65 to 150 ( ) Pulse width limited by safe operating area (1) ISD ≤0.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. THERMAL DATA IPAK Rthj-case Rthj-amb Rthj-lead Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Junction-lead Max Maximum Lead Temperature For Soldering Purpose 275 4.1 100 120 40 260 TO-92 °C/W °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter IPAK Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 1.5 25 Max Value TO-92 A m J Unit 2/11 STD2NC45-1, STQ1NC45 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE...