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STD8N06 Datasheet - ST Microelectronics

STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD8N06 s s s s s s s s V DSS 60 V R DS( on) < 0.25 Ω ID 8A s s TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 1 IPAK TO-2.

STD8N06_STMicroelectronics.pdf

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Datasheet Details

Part number:

STD8N06

Manufacturer:

STMicroelectronics ↗

File Size:

171.58 KB

Description:

N - channel enhancement mode power mos transistor.

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TAGS

STD8N06 STD8N06 CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ST Microelectronics

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