STD8NM60N-1
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N-channel power mosfet. This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical str
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STD8NM60N - N-channel Power MOSFET
(STMicroelectronics)
STD8NM60N - STD8NM60N-1 STF8NM60N - STP8NM60N
N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET
.
STD8NM60ND - Power MOSFET
(STMicroelectronics)
STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND
N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
Features
Type STD8NM.
STD8NM60ND - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
STD8NM60ND
FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-.
STD8NM50N - N-channel Power MOSFET
(STMicroelectronics)
STD8NM50N, STP8NM50N, STU8NM50N
N-channel 500 V, 0.73 Ω typ., 5 A MDmesh™II Power MOSFET in DPAK, TO-220 and IPAK packages
Datasheet — production data.
STD8NM50N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
:.
STD8N06 - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
(ST Microelectronics)
STD8N06
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STD8N06
s s s s s s s s
V DSS 60 V
R DS( on) < 0.25 Ω
ID 8A
s
s
TYPICAL RDS(on) =.
STD8N10L - N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
(ST Microelectronics)
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its R.
STD8N60DM2 - N-Channel Power MOSFET
(STMicroelectronics)
STD8N60DM2
Datasheet
N-channel 600 V, 550 mΩ typ., 8 A, MDmesh DM2 Power MOSFET in a DPAK package
TAB 23 1
DPAK D(2, TAB)
G(1)
S(3)
Features
Order .
STD8N65M5 - N-Channel Power MOSFET
(ST Microelectronics)
STB8N65M5, STD8N65M5, STF8N65M5
Datasheet
N-channel 650 V, 0.56 Ω typ., 7 A MDmesh M5 Power MOSFETs in a D²PAK, DPAK and TO-220FP packages
TAB
2 3
1
.
STD8N65M5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
:.