STD8NM60N-1 - N-channel Power MOSFET
This series of devices implements second generation MDmesh™ technology.
This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficiency
STD8NM60N-1 Features
* www.DataSheet4U.com Type VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max
