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STD80N10F7 N-Channel MOSFET

STD80N10F7 Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STD80N10F7 *.

STD80N10F7 Features

* Extremely low gate charge
* Ultra low on-resistance
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STD80N10F7 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 70 48 A IDM Drain Current-Single Pulsed 280 A PD Total Dissipation 85 W Tj

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Datasheet Details

Part number
STD80N10F7
Manufacturer
INCHANGE
File Size
246.98 KB
Datasheet
STD80N10F7-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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