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STD100N10F7 - N-Channel MOSFET

STD100N10F7 Description

isc N-Channel MOSFET Transistor *.

STD100N10F7 Features

* Static drain-source on-resistance: RDS(on)≤8mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STD100N10F7 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 120 Tj Max. Operating Junction Tempe

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Datasheet Details

Part number
STD100N10F7
Manufacturer
INCHANGE
File Size
239.21 KB
Datasheet
STD100N10F7-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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