Datasheet Details
- Part number
- STD100N10F7
- Manufacturer
- INCHANGE
- File Size
- 239.21 KB
- Datasheet
- STD100N10F7-INCHANGE.pdf
- Description
- N-Channel MOSFET
STD100N10F7 Description
isc N-Channel MOSFET Transistor *.
STD100N10F7 Features
* Static drain-source on-resistance:
RDS(on)≤8mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
STD100N10F7 Applications
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
80
IDM
Drain Current-Single Pulsed
320
PD
Total Dissipation @TC=25℃
120
Tj
Max. Operating Junction Tempe
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