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STD10NM65N N-Channel MOSFET

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Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STD10NM65N *.

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Datasheet Specifications

Part number
STD10NM65N
Manufacturer
INCHANGE
File Size
204.46 KB
Datasheet
STD10NM65N-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* Load switch
* Power management
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±25 9 5.7 36 PD Total Dissipati

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