STD10NM60ND

N-channel Power MOSFET

STMicroelectronics

STD10NM60ND Features

* TAB 23 1 DPAK D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STD10NM60ND 650 V 600 mΩ 8A

* Fast-recovery body diode

* Low gate charge and input capacitance

* Low on-resistance RDS(on)

* 100% avalanche tested

* High dv/dt ruggedness Applica

STD10NM60ND General Description

AM01475v1_noZen This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift conver.

STD10NM60ND Datasheet (832.10 KB)