STD10NM50N

N-Channel Power MOSFET

STMicroelectronics

STD10NM50N Features

* Type VDSS (@Tjmax) RDS(on) max ID STD10NM50N STF10NM50N STP10NM50N 550 V < 0.63 Ω 7 A

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Applications

* Switching applications Description These devices are N-channel Power MOSFETs deve

STD10NM50N General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most.

STD10NM50N Datasheet (1.11 MB)