STD10NM60N

N-Channel Power MOSFET

ST Microelectronics

STD10NM60N Features

* TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD10NM60N 600 V 550 mΩ 10 A

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Applications

* Switching applications G(1) Description S(3) This device is an

STD10NM60N General Description

S(3) This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical AM01475v1_noZen structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefo.

STD10NM60N Datasheet (717.03 KB)