STD100NH02L Datasheet - ST Microelectronics

STD100NH02L N-CHANNEL POWER MOSFET

The STD100NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EF.

N-CHANNEL 24V - 0.0042 Ω - 60A DPAK/IPAK STripFET™ III POWER MOSFET TYPE STD100NH02L s s s s s s s STD100NH02L VDSS 24 V RDS(on) < 0.0048 Ω ID 60 A(2) s TYPICAL RDS(on) = 0.0042 Ω @ 10 V TYPICAL RDS(on) = 0.005 Ω @ 5 V RDS(ON) Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") 3 2 1 IPAK TO-251 (Suffix “.

STD100NH02L_STMicroelectronics.pdf