STD10NM60N Datasheet - INCHANGE

STD10NM60N, N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STD10NM60N *.

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STD10NM60N-INCHANGE.pdf

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Datasheet Details

Part number:

STD10NM60N

Manufacturer:

INCHANGE

File Size:

204.13 KB

Description:

N-Channel MOSFET

Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ （ TJ=175℃） TC=125℃ Drain Current-Single Pulsed ±25 10 5 32 PD Total Dissipation @TC=25℃ 70 Tch Max

STD10NM60N Distributors

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STD10NM60N N-Channel MOSFET INCHANGE

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