Datasheet Details
- Part number
- STD10NM60N
- Manufacturer
- INCHANGE
- File Size
- 204.13 KB
- Datasheet
- STD10NM60N-INCHANGE.pdf
- Description
- N-Channel MOSFET
STD10NM60N Description
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STD10NM60N *.
STD10NM60N Features
* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
STD10NM60N Applications
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃
（ TJ=175℃）
TC=125℃
Drain Current-Single Pulsed
±25
10 5
32
PD
Total Dissipation @TC=25℃
70
Tch
Max
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