STD80N240K6

N-channel Power MOSFET

STMicroelectronics

STD80N240K6 Features

* Order code VDS RDS(on) max. ID STD80N240K6 800 V 220 mΩ 16 A

* Worldwide best RDS(on) x area

* Worldwide best FOM (figure of merit)

* Ultra low gate charge

* 100% avalanche tested

* Zener-protected Applications AM01476v1_tab

* Flyback

STD80N240K6 General Description

This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density an.

STD80N240K6 Datasheet (534.53 KB)