STD80N6F6 Datasheet - STMicroelectronics

STD80N6F6 N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate * structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order code STD80N6F6 Table 1. Device summary Marking Packa.

STD80N6F6 Features

* 7$% '3$. Order code STD80N6F6 VDS 60 V RDS(on) max. ID 5 mΩ (1) 80 A 1. Current limited by package

* Designed for automotive applications and AEC-Q101 qualified

* Low gate charge

* Very low on-resistance

* High avalanche ruggedness Figure 1. Internal schem

STD80N6F6 Datasheet (646.18 KB)