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STP21N06LFI, STP21N06L Datasheet - ST Microelectronics

STP21N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

STP21N06L STP21N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP21N06L STP21N06LFI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.085 Ω < 0.085 Ω ID 21 A 14 A TYPICAL RDS(on) = 0.065 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE LOGIC LEVEL COMPATIBLE INPUT 175 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s .

STP21N06L_STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STP21N06LFI, STP21N06L. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

STP21N06LFI, STP21N06L

Manufacturer:

STMicroelectronics ↗

File Size:

197.54 KB

Description:

N - channel enhancement mode low threshold power mos transistor.

Note:

This datasheet PDF includes multiple part numbers: STP21N06LFI, STP21N06L.
Please refer to the document for exact specifications by model.

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STP21N06LFI STP21N06L CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ST Microelectronics

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