VND5E012MY-E - Double channel high-side driver

ST Microelectronics

VND5E012MY-E Datasheet Preview — Preview of VND5E012MY-E PDF

Datasheet Details

Part number	VND5E012MY-E
Manufacturer	STMicroelectronics ↗
File Size	770.78 KB
Description	Double channel high-side driver
Datasheet	VND5E012MY-E_STMicroelectronics.pdf

VND5E012MY-E Product details

Description

The VND5E012MY-E is a double channel highside driver manufactured in the ST proprietary VIPower™ M0-5 technology and housed in the tiny PowerSSO-36 package.

Features

Max transient supply voltage Operating voltage range Max on-state resistance (per ch. ) Current limitation (typ) Off-state supply current 1. Typical value with all loads connected. VCC 41V VCC 4.5 to 28V RON ILIMH IS 12 mΩ 74 A 2 µA(1) PowerSSO-36.
Reverse battery protection with self switch on of the Power MOSFET (see Figure 29).
Electrostatic discharge protection.
General.
Inrush current active management by power limitation.
Very low standby curre.

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Published: Feb 11, 2010 |