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W10NC70Z

STW10NC70Z

W10NC70Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

W10NC70Z General Description

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large vari.

W10NC70Z Datasheet (247.46 KB)

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Datasheet Details

Part number:

W10NC70Z

Manufacturer:

STMicroelectronics ↗

File Size:

247.46 KB

Description:

Stw10nc70z.
N-CHANNEL 700V - 0.58 Ω - 10.6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW10NC70Z s s STW10NC70Z VDSS 700 V RDS(on) < 0.75 Ω ID 10.6 A .

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W10NC70Z STW10NC70Z ST Microelectronics

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