W10NK807 Datasheet (ST Microelectronics)

W10NK807, STW10NK807

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Such series complements

www.DataSheet4U.com STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE STP10NK80Z STP10NK80ZFP STW10NK80Z s s s s s s VDSS 800 V 800 V 800 V RDS(on) < 0.90 Ω < 0.90 Ω < 0.90 Ω ID 9A 9A 9A Pw 160 W 40 W 160 W 3 1 2 TYPICAL RDS(on) = 0.78 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 2 1 TO

W10NK807 Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta