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ST36N10D

N-Channel Enhancement Mode MOSFET

ST36N10D General Description

STN36N10D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO-252 FEATURE l 100V/20.0A, RDS(ON) = 40mΩ (Typ.) @VGS = 10V l 100V/20.0A, RDS(ON) = 42mΩ @VGS = 4.5V l Super high density .

ST36N10D Datasheet (629.08 KB)

Preview of ST36N10D PDF

Datasheet Details

Part number:

ST36N10D

Manufacturer:

STANSON

File Size:

629.08 KB

Description:

N-channel enhancement mode mosfet.

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ST36N10D N-Channel Enhancement Mode MOSFET STANSON

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