GD1200HFX170V6S Datasheet - STARPOWER

GD1200HFX170V6S, IGBT

GD1200HFX170V6S STARPOWER SEMICONDUCTOR GD1200HFX170V6S 1700V/1200A 2 in one-package General .
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

GD1200HFX170V6S Datasheet Preview Page 2

Features

* Low VCE(sat) Trench IGBT technology
* 10μs short circuit capability
* VCE(sat) with positive temperature coefficient
* Maximum junction temperature 175oC
* Low inductance case
* Fast & soft reverse recovery anti-parallel FWD
* Isolated copper baseplate using DBC technol

GD1200HFX170V6S-STARPOWER.pdf