GD1200HFX170V6S
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as Motor drives and High-power converters.
Features
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- High-power converters
- Motor drives
- Traction drives
Equivalent Circuit Schematic
IGBT Module
IGBT
©2024 STARPOWER Semiconductor Ltd.
12/17/2024
1/10
B01
IGBT Module
Absolute Maximum Ratings TC=25o C unless otherwise noted
IGBT
Symbol
Description
Value
Unit
VCES
Collector-Emitter Voltage
VGES IC
Gate-Emitter Voltage Collector Current @ TC=25o C
@ TC=100o C
±20
1936 1200
ICRM
Repetitive Peak Collector Current tp limited by...
