GD1200HFX170C3S Datasheet | STARPOWER

Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as high power converters. Features - Low VCE(sat) Trench IGBT technology - 10μs short circuit capability - VCE(sat) with positive temperature coefficient - Maximum junction temperature 175o C - Low inductance case - Fast & soft reverse recovery anti-parallel FWD - Isolated copper baseplate using DBC technology Typical Applications - High Power Converters - Motor Drives - Wind Turbines Equivalent Circuit Schematic IGBT Module IGBT ©2024 STARPOWER Semiconductor Ltd. 1/16/2024 1/9 B01 IGBT Module Absolute Maximum Ratings TC=25o C unless otherwise noted IGBT Symbol VCES VGES ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25o C @ TC=100o C Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tvj=175o C Diode Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Module Symbol Tvjmax Tvjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min...