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GD1200HFX170C3S Datasheet IGBT

Manufacturer: STARPOWER

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General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as high power converters.

Overview

GD1200HFX170C3S STARPOWER SEMICONDUCTOR GD1200HFX170C3S 1700V/1200A 2 in.

Key Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

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