GD1200HFX170V6S
GD1200HFX170V6S is IGBT manufactured by STARPOWER.
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as Motor drives and High-power converters.
Features
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- High-power converters
- Motor drives
- Traction drives
Equivalent Circuit Schematic
IGBT Module
IGBT
©2024 STARPOWER Semiconductor Ltd.
12/17/2024
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B01
IGBT Module
Absolute Maximum Ratings TC=25o C unless otherwise noted
IGBT
Symbol
Description
Value
Unit
VCES
Collector-Emitter Voltage
VGES IC
Gate-Emitter Voltage Collector Current @ TC=25o C
@ TC=100o C
±20
1936 1200
ICRM
Repetitive Peak Collector Current tp limited by...