Datasheet4U.com

GD600HFY120C2S - IGBT

STARPOWER

📥 Download Datasheet

GD600HFY120C2S Datasheet Preview — Preview of GD600HFY120C2S PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: GD600HFY120C2S
Manufacturer: STARPOWER
File Size: 175.48 KB
Datasheet: GD600HFY120C2S-STARPOWER.pdf
Description: IGBT

GD600HFY120C2S Product details

Features

Low VCE(sat) Trench IGBT technology.
10μs short circuit capability.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175oC.
Low inductance case.
Fast & soft reverse recovery anti-parallel FWD.
Isolated copper baseplate using HPS DBC technology Typical.

📁 Related Datasheet

GD607 - Transistor (Tesla Elektronicke)
GD608 - Transistor (Tesla Elektronicke)
GD609 - Transistor (Tesla Elektronicke)
GD60MPS06H - Silicon Carbide Schottky Diode (GeneSiC)
GD60MPS17H - Silicon Carbide Schottky Diode (GeneSiC)
GD617 - Transistor (Tesla Elektronicke)
GD618 - Transistor (Tesla Elektronicke)
GD619 - Transistor (Tesla Elektronicke)

📌 All Tags

STARPOWER GD600HFY120C2S-like datasheet

GD600HFY120C2S Stock/Price