GD800HFA120C6SD
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle.
Features
- Low VCE(sat) Trench IGBT technology
- Short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Hybrid and electric vehicle
- Inverter for motor drive
- Uninterruptible power supply
Equivalent Circuit Schematic
IGBT Module
IGBT
©2024 STARPOWER Semiconductor Ltd.
4/16/2024
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B02
IGBT Module
Absolute Maximum Ratings TC=25o C unless otherwise noted
IGBT
Symbol VCES VGES IC ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage Collector Current @ TC=100o C Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tvj=175o C
Diode
Symbol VRRM IF IFM
IFSM
I2t
De...
