12A120K5 Datasheet - STMicroelectronics

12A120K5 N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product st.

12A120K5 Features

* Order code VDS RDS(on) max. ID STH12N120K5-2AG 1200 V 1.9 Ω 7A

* AEC-Q101 qualified

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested G(1) S(2, 3) Applications

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12A120K5 Datasheet (400.30 KB)