* Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE (sat) typ.=0.57Ω [IC=0.5A, IB=25mA]. Small ON-resistance (Ron). 0.4 0.5 0.6 0.4 1.8 15.0 3.0 0.4 1 2 1.3 0.7 3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings
12A01SP
Sanyo Semicon Device
61.05 KB
Low-frequency general-purpose amplifier applications.
www.DataSheet4U.com
Ordering number : ENN7480
12A01SP
PNP Epitaxial Planar Silicon Transistor
12A01SP
Low-Frequency General-Purpose Amplifier Appli.
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12A120K5 - N-channel Power MOSFET
(STMicroelectronics)
STH12N120K5-2AG
Datasheet
Automotive-grade N-channel 1200 V, 1.45 Ω typ., 7 A, MDmesh K5 Power MOSFET in an H²PAK‑2 package
TAB
23 1 H2PAK-2
D(TAB)
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