The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
| Part Number | Manufacturer | Description |
|---|---|---|
| 13003BDG | Unisonic Technologies | NPN SILICON TRANSISTOR |
| 13003 | Elite Enterprises | NPN Epitaxial Silicon Transistor |
| 13003CDH | Unisonic Technologies | NPN SILICON TRANSISTOR |
| 13003ADG | Unisonic Technologies | NPN SILICON TRANSISTOR |
| 13003BS | Unisonic Technologies | NPN SILICON TRANSISTOR |
| 13003ADA | Unisonic Technologies | NPN SILICON TRANSISTOR |
| 13003 | HSiN | HIGH VOLTAGE AND HIGH SPEED SWITCH |
| 13003DE | Unisonic Technologies | NPN SILICON TRANSISTOR |
| 13003BR | Unknown Manufacturer | MJE13003BR |
| 13003EDA | Unisonic Technologies | NPN SILICON TRANSISTOR |
