14NM65N Datasheet - STMicroelectronics

14NM65N N-channel Power MOSFET

This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding hi.

14NM65N Features

* Type STI14NM65N STB14NM65N STF14NM65N STP14NM65N STW14NM65N VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω ID 12 A 12 A 12 A(1) 12 A 12 A 1. Limited only by maximum temperature allowed

* 100% avalanche tested

* Low input capacitance

14NM65N Datasheet (515.03 KB)