210N4LF7 - N-Channel Power MOSFET

STMicroelectronics

210N4LF7 Datasheet Preview — Preview of 210N4LF7 PDF

Datasheet Details

Part number	210N4LF7
Manufacturer	STMicroelectronics ↗
File Size	579.20 KB
Description	N-Channel Power MOSFET
Datasheet	210N4LF7-STMicroelectronics.pdf

210N4LF7 Product details

Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order code STL210N4LF7AG VDS 40 V RDS(on) max. 1.6 mΩ.
AEC-Q101 qualified.
Among the lowest RDS(on) on the market.
Excellent FoM (figure of merit).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness.
Wettable flank package ID 120 A G(4).

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Published: Oct 1, 2023 |