210N4LF7 Datasheet - STMicroelectronics

210N4LF7 N-Channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STL210N4LF7AG Product summary Orde.

210N4LF7 Features

* Order code STL210N4LF7AG VDS 40 V RDS(on) max. 1.6 mΩ

* AEC-Q101 qualified

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness

* Wettable flank package ID 12

210N4LF7-STMicroelectronics.pdf