210N4LF7 - N-Channel Power MOSFET
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Product status link STL210N4LF7AG Product summary Orde
210N4LF7 Features
* Order code STL210N4LF7AG VDS 40 V RDS(on) max. 1.6 mΩ
* AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness
* Wettable flank package ID 12
