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2N6059 - SILICON NPN POWER DARLINGTON TRANSISTOR

Datasheet Summary

Description

The 2N6059 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case.

It is inteded for use in power linear and low frequency switching applications.

R1 Typ.

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Datasheet Details

Part number 2N6059
Manufacturer STMicroelectronics
File Size 64.97 KB
Description SILICON NPN POWER DARLINGTON TRANSISTOR
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2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR s s s s s s SGS-THOMSON PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6059 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in power linear and low frequency switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 6 KΩ R2 Typ. = 55 Ω ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEX V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = -1.
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