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2N6052 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR

2N6052 Description

2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general *purpose amplifier and low fr.

2N6052 Features

* High DC Current Gain
* hFE = 3500 (Typ) @ IC = 5.0 Adc
* Collector
* Emitter Sustaining Voltage
* @ 100 mA VCEO(sus) = 100 Vdc (Min)
* Monolithic Construction with Built
* In Base
* Emitter Shunt Resistors
* This is a Pb
* Fre

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