2N6052 Datasheet - ON Semiconductor

2N6052 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR

2N6052 Features

* High DC Current Gain

* hFE = 3500 (Typ) @ IC = 5.0 Adc

* Collector

* Emitter Sustaining Voltage

* @ 100 mA VCEO(sus) = 100 Vdc (Min)

* Monolithic Construction with Built

* In Base

* Emitter Shunt Resistors

* This is a Pb

* Fre

Datasheet Details

2N6052

132.01 KB

Darlington complementary silicon power transistor.

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