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2N6052 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR

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ON Semiconductor

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2N6052 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR by ON Semiconductor - Datasheet Preview — Datasheet preview – 2N6052

Datasheet Details

Part number	2N6052
Manufacturer	ON Semiconductor
File Size	132.01 KB
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
Datasheet	2N6052 Datasheet
Additional preview pages of the 2N6052 datasheet.

Product details

Features

High DC Current Gain.
hFE = 3500 (Typ) @ IC = 5.0 Adc.
Collector.
Emitter Sustaining Voltage.
@ 100 mA VCEO(sus) = 100 Vdc (Min).
Monolithic Construction with Built.
In Base.
Emitter Shunt Resistors.
This is a Pb.
Free Device.

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Published: Mar 22, 2005 |