* Programmable
* RBB, h, IV and IP
* Low On
* State Voltage
* 1.5 V Maximum @ IF = 50 mA
* Low Gate to Anode Leakage Current
* 10 nA Maximum
* High Peak Output Voltage
* 11 V Typical
* Low Offset Voltage
* 0.35 V T
2N6028
73.57 KB
Programmable unijunction transistor.
2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “p.
📁 Related Datasheet
2N6027 - Programmable Unijunction Transistor
(ON Semiconductor)
2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “p.
2N6027 - PROGRAMMABLE UNIJUNCTION TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2N6027
PROGRAMMABLE UNIJUNCTION TRANSISTOR
DESCRIPTION
The UTC 2N6027 is a programmable unijunction transistor, it us.
2N6027 - SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
(Central Semiconductor)
2N6027 2N6028
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6.
2N6028 - Programmable Unijunction Transistor
(NTE)
2N6028 Programmable Unijunction Transistor
Description: Designed to enable the engineer to “program” unijunction characteristics such as RBB, , IV, a.
2N6028 - SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
(Central Semiconductor)
2N6027 2N6028
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6.
2N6029 - COMPLEMENTARY SILICON POWER TRANSISTORS
(Central Semiconductor Corp)
2N5629 2N5630 NPN 2N6029 2N6030 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCT.
2N6029 - COMPLEMENTARY HIGH POWER TRANSISTORS
(Thomson)
.
2N6029 - (2N6029 / 2N6030) Silicon PNP Power Transistor
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3 package ·Complement to type 2N.
