2N60-F - N-CHANNEL MOSFET

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UTC

2N60-F N-CHANNEL MOSFET by UTC - Datasheet Preview — Datasheet preview – 2N60-F

Datasheet Details

Part number	2N60-F
Manufacturer	UTC
File Size	391.37 KB
Description	N-CHANNEL MOSFET
Datasheet	2N60-F Datasheet
Additional preview pages of the 2N60-F datasheet.

Product details

Description

The UTC 2N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

S.
RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A.
Fast switching capability.
Avalanche energy tested.
Improved dv/dt capability, high ruggedness.
SYMBOL 2.Drain 1 TO-251 1 TO-252 1.Gate 3.Source.

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Published: Apr 22, 2020 |