2N60-F Datasheet - UTC

2N60-F N-CHANNEL MOSFET

The UTC 2N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching po.

2N60-F Features

* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness

* SYMBOL 2.Drain 1 TO-251 1 TO-252 1.Gate 3.Source

* ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 2N60L-TM3-T

2N60-F-UTC.pdf