Description
The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Features
- S.
- RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0A.
- Ultra Low gate charge (typical 45nC).
- Low reverse transfer capacitance (CRSS = typical 9 pF).
- Fast switching capability.
- Avalanche energy specified.
- Improved dv/dt capability, high ruggedness.
- SYMBOL
2.Drain
1 TO-252D
1 TO-263
1 TO-262
1
1
TO-126 TO-126C
1 TO-126S
1.Gate
3.Source
www. unisonic. com. tw Copyright © 2020 Unisonic Technologies Co. , Ltd
1 of 7
QW-R502-370.M
2N65
Power MOSFET.
2N65-UTC.pdf
