2N60-E Datasheet (Unisonic Technologies)

2N60-E, N-CHANNEL POWER MOSFET

The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

This power MOSFET is usually used at high speed switching applications in power suppli

2N60-E Features

* RDS(ON) < 5.0Ω @ VGS = 10V, ID =1A

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness