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2N60-E Datasheet - Unisonic Technologies

2N60-E N-CHANNEL POWER MOSFET

The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power suppli.

2N60-E Features

* RDS(ON) < 5.0Ω @ VGS = 10V, ID =1A

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

* SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-974.D 2N60-E Power MOSFET

2N60-E Datasheet (305.68 KB)

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Datasheet Details

Part number:

2N60-E

Manufacturer:

Unisonic Technologies

File Size:

305.68 KB

Description:

N-channel power mosfet.

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2N60-E N-CHANNEL POWER MOSFET Unisonic Technologies

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