2N60-E - N-CHANNEL POWER MOSFET

Product Overview

Unisonic Technologies

Datasheet Details

Part number	2N60-E
Manufacturer	Unisonic Technologies
File Size	305.68 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	2N60-E Datasheet
Additional preview pages of the 2N60-E datasheet.

Product details

Description

The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

S.
RDS(ON) < 5.0Ω @ VGS = 10V, ID =1A.
Fast switching capability.
Avalanche energy specified.
Improved dv/dt capability, high ruggedness.
SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2017 Unisonic Technologies Co. , Ltd 1 of 7 QW-R502-974.D 2N60-E Power MOSFET.

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Published: Jan 29, 2016 |