* Programmable
* RBB, h, IV and IP
* Low On
* State Voltage
* 1.5 V Maximum @ IF = 50 mA
* Low Gate to Anode Leakage Current
* 10 nA Maximum
* High Peak Output Voltage
* 11 V Typical
* Low Offset Voltage
* 0.35 V T
2N6027
73.57 KB
Programmable unijunction transistor.
2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “p.
📁 Related Datasheet
2N6027 PROGRAMMABLE UNIJUNCTION TRANSISTOR (UTC)
2N6027 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS (Central Semiconductor)
2N6028 Programmable Unijunction Transistor (ON Semiconductor)
2N6028 Programmable Unijunction Transistor (NTE)
2N6028 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS (Central Semiconductor)
2N6029 COMPLEMENTARY SILICON POWER TRANSISTORS (Central Semiconductor Corp)
2N6029 COMPLEMENTARY HIGH POWER TRANSISTORS (Thomson)
2N6029 (2N6029 / 2N6030) Silicon PNP Power Transistor (SavantIC)
2N60 2A 600V N-channel Enhancement Mode Power MOSFET (ROUM)
2N60 N-Channel MOSFET (HAOHAI)
