* High safe operating area(100 tested) 150W and 100V
* Complement Characterized for linear operation
* High DC Current Gain and low saturation voltage Hfe=15(8A 4V) Vce(sat)=1.4V(Ic=8A,Ib=0.8A)
* For Low Distortion Complementary Designs TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless oth
2N6099
UTC
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Complementary silicon transistors.
UTC 2N3773/2N6099
COMPLEMENTARY SILICON TRANSISTORS
The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positi.
📁 Related Datasheet
2N6090 Silicon Dual Differential Amplifier Transistors (Semiconductor Technology)
2N6091 Silicon Dual Differential Amplifier Transistors (Semiconductor Technology)
2N6092 Silicon Dual Differential Amplifier Transistors (Semiconductor Technology)
2N6093 NPN SILICON RF POWER TRANSISTOR (ASI)
2N6094 PNP SILICON RF POWER TRANSISTORS (ETC)
2N6095 PNP SILICON RF POWER TRANSISTORS (ETC)
2N6096 PNP SILICON RF POWER TRANSISTORS (ETC)
2N6097 PNP SILICON RF POWER TRANSISTORS (ETC)
2N6097 PNP Silicon RF Power Transistor (ASI)
2N6098 NPN Transistor (INCHANGE)
