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2N6099 Datasheet - UTC

2N6099 COMPLEMENTARY SILICON TRANSISTORS

2N6099 Features

* High safe operating area(100 tested) 150W and 100V

* Complement Characterized for linear operation

* High DC Current Gain and low saturation voltage Hfe=15(8A 4V) Vce(sat)=1.4V(Ic=8A,Ib=0.8A)

* For Low Distortion Complementary Designs TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless oth

2N6099 Datasheet (95.16 KB)

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Datasheet Details

Part number:

2N6099

Manufacturer:

UTC

File Size:

95.16 KB

Description:

Complementary silicon transistors.

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2N6099 COMPLEMENTARY SILICON TRANSISTORS UTC

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