Datasheet4U Logo Datasheet4U.com

2N6099 COMPLEMENTARY SILICON TRANSISTORS

2N6099 Description

UTC 2N3773/2N6099 COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positi.

2N6099 Features

* High safe operating area(100 tested) 150W and 100V
* Complement Characterized for linear operation
* High DC Current Gain and low saturation voltage Hfe=15(8A 4V) Vce(sat)=1.4V(Ic=8A,Ib=0.8A)
* For Low Distortion Complementary Designs TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless oth

📥 Download Datasheet

Preview of 2N6099 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2N6099
Manufacturer
UTC
File Size
95.16 KB
Datasheet
2N6099_UTC.pdf
Description
COMPLEMENTARY SILICON TRANSISTORS

📁 Related Datasheet

  • 2N6090 - Silicon Dual Differential Amplifier Transistors (Semiconductor Technology)
  • 2N6091 - Silicon Dual Differential Amplifier Transistors (Semiconductor Technology)
  • 2N6092 - Silicon Dual Differential Amplifier Transistors (Semiconductor Technology)
  • 2N6093 - NPN SILICON RF POWER TRANSISTOR (ASI)
  • 2N6094 - PNP SILICON RF POWER TRANSISTORS (ETC)
  • 2N6095 - PNP SILICON RF POWER TRANSISTORS (ETC)
  • 2N6096 - PNP SILICON RF POWER TRANSISTORS (ETC)
  • 2N6097 - PNP SILICON RF POWER TRANSISTORS (ETC)

📌 All Tags

COMPLEMENTARY SILICON TRANSISTORS UTC
UTC 2N6099-like datasheet