2N6099 - COMPLEMENTARY SILICON TRANSISTORS

Datasheet Details

Part number	2N6099
Manufacturer	UTC
File Size	95.16 KB
Description	COMPLEMENTARY SILICON TRANSISTORS
Datasheet	2N6099_UTC.pdf

High safe operating area(100 tested) 150W and 100V.
Complement Characterized for linear operation.
High DC Current Gain and low saturation voltage Hfe=15(8A 4V) Vce(sat)=1.4V(Ic=8A,Ib=0.8A).
For Low Distortion Complementary Designs TO-3.

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Published: Apr 13, 2007 |