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2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR

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Description

® 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED .
The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package.

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Applications

* 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 160 Ω ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEV V CER V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I B = 0) Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (R BE ≤ 100 Ω ) Collect

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