2N6383 Datasheet - Microsemi Corporation

2N6383 NPN DARLINGTON POWER SILICON TRANSISTOR

TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/523 Devices 2N6383 2N6384 2N6385 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol 2N6383 2N6384 2N6385 Unit VCEO VCBO VEBO IB IC PT Top, Tstg 40 40 60 60 5.0 0.25 10 6.0 100 -55 to +175 Max. 1.75 80 80 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) .

2N6383_MicrosemiCorporation.pdf