32NM50N
1.14MB
N-channel mosfet. These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFE
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32N50 - N-Channel MOSFET
(IXYS)
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFT 30N50 IXFH/IXFT 32N50
V DSS
500 V 500 V
I
D25
30 .
32N50Q - IXFR32N50Q
(IXYS Corporation)
..
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOST.
32N65DM6 - N-channel Power MOSFET
(STMicroelectronics)
STHU32N65DM6AG
Datasheet
Automotive-grade N-channel 650 V, 83 mΩ typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package
Features
Order code
VDS
R.
32NAB125T12 - SKIIP32NAB125T12
(Semikron International)
SKiiP 32 NAB 12 Absolute Maximum Ratings
Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) Values 1200 ± 20 65 / 45 130 / 90 60 / 40 .
32-TQFP - 4-channel BTL driver for CD
(Rohm)
.
320-LA20 - V320LA20
(Littelfuse)
Varistor Products
Line Voltage Operation, Radial Lead
LA Varistor Series
The LA Series of transient voltage surge suppressors are radial-lead varistor.
3202 - 200 V - 1/000 V Three Phase Bridge
(ETC)
200 V - 1,000 V Three Phase Bridge
4.0 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time
3202 - 3210 3202F - 3210F 3202UF - 3210UF
ELECTRICAL .
3202F - 200 V - 1/000 V Three Phase Bridge
(ETC)
200 V - 1,000 V Three Phase Bridge
4.0 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time
3202 - 3210 3202F - 3210F 3202UF - 3210UF
ELECTRICAL .
3202UF - 200 V - 1/000 V Three Phase Bridge
(ETC)
200 V - 1,000 V Three Phase Bridge
4.0 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time
3202 - 3210 3202F - 3210F 3202UF - 3210UF
ELECTRICAL .
3205 - Power MOSFET
(ETC)
3205
product description
FHP3205 is a low-voltage high-current power MOS field effect transistor, widely used in power inverters
Features
110A, 55V,.