Datasheet Specifications
- Part number
- 32N50Q
- Manufacturer
- IXYS Corporation
- File Size
- 119.22 KB
- Datasheet
- 32N50Q_IXYSCorporation.pdf
- Description
- IXFR32N50Q
Description
www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOST.
Features
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolationApplications
* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 30N50 32N50 100 1 0.16 0.15 V V nA mA mA W W Advantages32N50Q Distributors
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