* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(
32N50Q
IXYS Corporation
119.22 KB
ixfr32n50q.
www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOST.
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