This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Int_schem_P_ch_nTnZ_SOT_223 Order code STN3P6F6 Table 1: Device summary Marking Package 3P6F6 SOT-.
