* Type STD65N55F3 VDS 55 V RDS(on) max. 8.5 mΩ ID 80 A PTOT 110 W
* AEC-Q101 qualified
* 100% avalanche tested Applications
* Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on
65N55F3
655.79 KB
N-channel power mosfet.
STD65N55F3
Datasheet
Automotive-grade N-channel 55 V, 6.5 mΩ typ., 80 A STripFET F3 Power MOSFET in a DPAK package
TAB
23 1 DPAK
D(2, TAB)
G(1)
S(3.
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