Description
These N-Channel enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology.
Features
- 65A, 60V, RDS(on)= 0.016Ω @VGS= 10 V Low gate charge ( typical 48nC) Low Crss ( typical 32.5pF) Fast switching 100% avalanche tested Improved dv/dt capability 175º maximum junction temperature rating
www. DataSheet. net/
3. Pin configuration
Pin 1 2 3 4
Function Gate Drain Source Drain
1 of 7
Datasheet pdf - http://www. DataSheet4U. co. kr/
KIA.
65N06_KIA.pdf
