B11NM60N - N-CHANNEL Power MOSFET

STMicroelectronics

Datasheet Details

Part number	B11NM60N
Manufacturer	STMicroelectronics ↗
File Size	769.91 KB
Description	N-CHANNEL Power MOSFET
Datasheet	B11NM60N-STMicroelectronics.pdf

This series of devices is designed using the second generation of MDmesh™ technology.

Type VDSS (@TJmax) STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N 650 V 650 V 650 V 650 V 650 V 650 V RDS(on) max 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω ID 10 A 10 A 10 A 10 A 10 A(1) 10 A 1. Limited only by maximum temperature allowed.
100% avalanche tested.
Low input capacitance and gate charge.
Low gate input resistance.

📁 B11NM60N Similar Datasheet

B110 - Low Voltage X-Ray Tube (Ferranti)
B1100 - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
B1100B - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
B1100BQ - 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes)
B1100CALRP - SIDACtor Protection Thyristors (Littelfuse)
B1100CCLRP - SIDACtor Protection Thyristors (Littelfuse)
B1100LB - 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
B1100Q - 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes)

Other Datasheets by STMicroelectronics

Published: Jan 12, 2019 |