B11NM60N Datasheet - STMicroelectronics

B11NM60N - N-CHANNEL Power MOSFET

This series of devices is designed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most demanding h

B11NM60N Features

* Type VDSS (@TJmax) STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N 650 V 650 V 650 V 650 V 650 V 650 V RDS(on) max 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω ID 10 A 10 A 10 A 10 A 10 A(1) 10 A 1. Limited only by maximum temperature allowed

* 100% avalanche tested

B11NM60N-STMicroelectronics.pdf

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Datasheet Details

Part number:

B11NM60N

Manufacturer:

STMicroelectronics ↗

File Size:

769.91 KB

Description:

N-channel power mosfet.

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B11NM60N N-CHANNEL Power MOSFET STMicroelectronics