Part number:
B11NM60N
Manufacturer:
File Size:
769.91 KB
Description:
N-channel power mosfet.
This series of devices is designed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding h
B11NM60N Features
* Type VDSS (@TJmax) STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N 650 V 650 V 650 V 650 V 650 V 650 V RDS(on) max 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω ID 10 A 10 A 10 A 10 A 10 A(1) 10 A 1. Limited only by maximum temperature allowed
* 100% avalanche tested
B11NM60N-STMicroelectronics.pdf
Datasheet Details
B11NM60N
769.91 KB
N-channel power mosfet.
📁 Related Datasheet
📌 All Tags