B20NM60
437.01kb
N-channel power mosfet. The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ h
TAGS
📁 Related Datasheet
B20NM50FD - N-CHANNEL POWER MOSFET
(STMicroelectronics)
STB20NM50FD STF20NM50FD - STP20NM50FD
N-channel 500 V, 0.22 Ω, 20 A D2PAK, TO-220FP, TO-220 FDmesh™ Power MOSFET (with fast diode)
Features
Type
VD.
B20N03 - N-Channel MOSFET
(Excelliance MOS)
CHIPSET-IC.COM
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
20mΩ
ID
12A
G
UIS, .
B20NK50Z - N-Channel MOSFET
(STMicroelectronics)
STB20NK50Z
N-channel 500 V, 0.23 Ω, 17 A SuperMESH™ Power MOSFET Zener-protected in D²PAK package
Datasheet — obsolete product
Features
Type
VDSS
.
B2000T - SMD Power Cross Protection Fuse
(BOURNS)
Features
n For use in telemunication circuit applications requiring low current protection with high surge tolerance
n Overcurrent protection to Te.
B2006 - Tube
(Philips)
.
B200NF03 - N-channel MOSFET
(STMicroelectronics)
STP200NF03 STB200NF03 - STB200NF03-1
N-channel 30V - 0.0032Ω - 120A - D2PAK/I2PAK/TO-220 STripFET™ III Power MOSFET
General features
Type STP200NF03.
B20100G - Schottky Power Rectifier
(ON Semiconductor)
Switch-mode Schottky Power Rectifier
MBRF20100CTG
The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−sil.
B201SW01-V0 - Color TFT-LCD
(AUO)
..net
Product Specification
AU OPTRONICS CORPORATION
( V) Preliminary Specifications ( ) Final Specifications Module Model Name 20.1” .
B2020W - SCHOTTKY BARRIER DIODE
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
B2020W SCHOTTKY BARRIER DIODE
FEATURES z Low Forward Voltage Dr.
B2020WS - SCHOTTKY BARRIER DIODE
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
B2020WS SCHOTTKY BARRIER DIODE
FEATURES z Low Forward Voltage D.