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BULK128D Datasheet - STMicroelectronics

BULK128D - NPN Transistor

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in l

BULK128D_STMicroelectronics.pdf

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BULK128D NPN Transistor STMicroelectronics