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BULT118 Datasheet - STMicroelectronics

BULT118 NPN Transistor

so rodThe device is manufactured using high voltage multi-epitaxial planar technology for high b Pswitching speeds and medium voltage capability. - O teIt uses a cellular emitter structure with planar ) leedge termination to enhance switching speeds t(s owhile maintaining the wide RBSOA. c bsThe dev.

BULT118_STMicroelectronics.pdf

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BULT118 BULT118 NPN Transistor STMicroelectronics

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