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D1047 NPN Transistor

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Description

2SD1047 High power NPN epitaxial planar bipolar transistor .
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

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Features

* High breakdown voltage VCEO = 140 V
* Typical ft = 20 MHz

Applications

* NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions d

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