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D1047 - NPN Transistor

Description

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

The resulting transistor shows good gain linearity behaviour.

Figure 1.

Features

  • High breakdown voltage VCEO = 140 V.
  • Typical ft = 20 MHz.
  • Fully characterized at 125 oC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. 3 2 1 TO-3P Figure 1. Internal schematic diagram Table 1. Device summary Order code 2SD1047 April 2011 Marking 2SD1047 Package TO-3P Doc ID 018729 Rev 1 Packaging Tube 1/10 www.st.com 10 Electrical ratings 1 Electrical ratings Table 2.
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