F6NK60Z Datasheet (STMicroelectronics)

F6NK60Z, N-CHANNEL Power MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Such series complements

STP6NK50Z - STF6NK60Z STD6NK50Z N-CHANNEL 500V - 0.98Ω - 5.6A TO-220 / TO-220FP / DPAK Zener-Protected SuperMESH™Power MOSFET TARGET DATA TYPE STP6NK50Z STF6NK50Z STD6NK50Z s s s s s s VDSS 500 V 500 V 500 V RDS(on) < 1.2 Ω < 1.2 Ω < 1.2 Ω ID 5.6 A 5.6 A 5.6 A Pw 90 W 25 W 90 W 3 1 2 TYPICAL RDS(on) = 0.98 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 DPAK DESCRIPTI

F6NK60Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta